参数项参数值
参数项参数值
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs117mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-262
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
Qualification-
Moisture Sensitivity Level1 (Unlimited)