参数项参数值
参数项参数值
DC Current Gain hFE Max240
Gain Bandwidth Product fT120 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current800 mA
Collector- Emitter Voltage VCEO Max120 V
Continuous Collector Current800 mA
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min80
Package / CaseSC-62-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541210000
ImageToshiba 2SC2881-Y(TE12L,ZC
RoHS Details
Unit Weight0.001764 oz
Series2SC
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation1 W
BrandToshiba
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANS POWER
ManufacturerToshiba
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)