参数项参数值
参数项参数值
DC Current Gain hFE Max125 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min125
Width0.62 mm
Height0.47 mm
Length1.02 mm
Package / CaseDFN-1006-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.000030 oz
RoHS Details
Pd - Power Dissipation430 mW
BrandNexperia
Part # Aliases934057146315
ImageNexperia BC857AM,315
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity10000
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS GP TAPE-7
Moisture Sensitivity Level1 (Unlimited)