参数项参数值
参数项参数值
Half Intensity Angle Degrees12 deg
Lens Color/StyleBlack Transparent
Collector- Emitter Voltage VCEO Max30 V
Peak Wavelength940 nm
Width2.2 mm
Height3 mm
Length2.7 mm
Package / CaseT-3/4
Minimum Operating Temperature- 25 C
Maximum Operating Temperature+ 85 C
Moisture SensitiveYes
CNHTS8541290000
Operating Supply Voltage5 V
TARIC8541409000
PackagingReel
PackagingMouseReel
PackagingCut Tape
RoHS Details
ImageON Semiconductor / Fairchild QSB363ZR
SubcategoryOptical Detectors and Sensors
Fall Time15 uS
BrandON Semiconductor / Fairchild
ManufacturerON Semiconductor
SeriesQSB363
Factory Pack Quantity1000
Product CategoryPhototransistors
Unit Weight0.003175 oz
USHTS8541407080
Product TypePhototransistors
DescriptionPhototransistors Phototransistor Si Infrared
Pd - Power Dissipation75 mW
Dark Current100 nA
Rise Time15 uS
TypePhoto Transistor
Moisture Sensitivity Level3 (168 Hours)