参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min110 S, 55 S
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
CAHTS8541290000
Height1.27 mm
Length5.9 mm
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time3.9 ns
ImageInfineon Technologies BSC0902NSI
Product CategoryMOSFET
Rds On - Drain-Source Resistance2.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Maximum Operating Temperature+ 150 C
Package / CaseTDSON-8
DescriptionMOSFET N-Ch 30V 100A TDSON-8 OptiMOS
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width5.15 mm
Mounting StyleSMD/SMT
TARIC8541290000
Factory Pack Quantity5000
BrandInfineon Technologies
Qg - Gate Charge16.2 nC
MXHTS85412999
Product TypeMOSFET
ManufacturerInfineon
RoHS Details
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time3.8 ns
Unit Weight0.004169 oz
CNHTS8541290000
Part # AliasesSP000854380 BSC92NSIXT BSC0902NSIATMA1
Pd - Power Dissipation2.5 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time5.4 ns