参数项参数值
参数项参数值
Forward Transconductance - Min8 ms
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySi
Id - Continuous Drain Current21 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.1 ns
Width1.3 mm
Rds On - Drain-Source Resistance280 Ohms
Transistor Type1 N-Channel
Height1.1 mm
Typical Turn-Off Delay Time14 ns
Length2.9 mm
Mounting StyleSMD/SMT
Qg - Gate Charge1.4 nC
Package / CasePG-SOT-23-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
RoHS Details
ImageInfineon Technologies BSS126H6327XTSA2
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Channel ModeDepletion
BrandInfineon Technologies
Fall Time115 ns
ManufacturerInfineon
Factory Pack Quantity3000
SeriesBSS126
Product CategoryMOSFET
Unit Weight0.001199 oz
Product TypeMOSFET
DescriptionMOSFET N-Ch 600V 21mA SOT-23-3
Part # AliasesBSS126 H6327 SP000919334
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time9.7 ns
Moisture Sensitivity Level1 (Unlimited)