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商品参数
参数项参数值
参数项参数值
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C112A (Tc)
Rds On (Max) @ Id, Vgs7.6mOhm @ 56A, 10V
FET Feature-
Power Dissipation (Max)214W (Tc)
Vgs(th) (Max) @ Id4.6V @ 160µA
Supplier Device PackagePG-TO220-3-1
Grade-
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4700 pF @ 75 V
Qualification-
Moisture Sensitivity Level1 (Unlimited)