参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current60 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Width4.4 mm
Height15.65 mm
Rds On - Drain-Source Resistance32 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length10 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleThrough Hole
Qg - Gate Charge60 nC
Package / CaseTO-220-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541210000
ImageInfineon / IR IRFB52N15DPBF
PackagingTube
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity1000
SubcategoryMOSFETs
BrandInfineon / IR
Product CategoryMOSFET
Unit Weight0.211644 oz
DescriptionMOSFET MOSFT 150V 60A 32mOhm 60nC
ManufacturerInfineon
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation320 W
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)