参数项参数值
参数项参数值
Forward Transconductance - Min73 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time27 ns
Width4.4 mm
Height15.65 mm
Rds On - Drain-Source Resistance4.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time48 ns
MXHTS85412999
Length10 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleThrough Hole
Qg - Gate Charge88 nC
Package / CaseTO-220-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
ImageInfineon Technologies IPP045N10N3GXKSA1
PackagingTube
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity500
Fall Time14 ns
SeriesOptiMOS 3
SubcategoryMOSFETs
BrandInfineon Technologies
Product CategoryMOSFET
Unit Weight0.211644 oz
DescriptionMOSFET N-Ch 100V 100A TO220-3 OptiMOS 3
ManufacturerInfineon
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation214 W
Part # AliasesIPP045N10N3 G SP000680794
Vds - Drain-Source Breakdown Voltage100 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time59 ns
Moisture Sensitivity Level1 (Unlimited)