参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance2.5 mOhms
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85423102
Qg - Gate Charge135 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
ProductHEXFET Power MOSFET
CNHTS8541210000
PackagingTube
TARIC8542319000
RoHS Details
ImageInfineon / IR IRFB7440PBF
Unit Weight0.211644 oz
Factory Pack Quantity1000
BrandInfineon / IR
Pd - Power Dissipation208 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET 40V 120A 2.5 mOhm HEXFET 90nC 208W
Vds - Drain-Source Breakdown Voltage40 V
USHTS8542310001
TradenameStrongIRFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)