参数项参数值
参数项参数值
Forward Transconductance - Min60 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.3 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.7 ns
MXHTS85412999
Rds On - Drain-Source Resistance2.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25 ns
KRHTS8541299000
Qg - Gate Charge30 nC
Package / CaseTDSON-8
CNHTS8541290000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
Channel ModeEnhancement
Fall Time5.4 ns
TARIC8541290000
ImageInfineon Technologies BSC0702LSATMA1
RoHS Details
Factory Pack Quantity5000
ManufacturerInfineon
Unit Weight0.004180 oz
BrandInfineon Technologies
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET DIFFERENTIATED MOSFETS
SubcategoryMOSFETs
Pd - Power Dissipation83 W
Part # AliasesBSC0702LS SP001589462
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time4.8 ns
Moisture Sensitivity Level1 (Unlimited)