参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current21 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Rds On - Drain-Source Resistance4.4 mOhms
Transistor Type1 N-Channel
Width3.9 mm
MXHTS85412999
Height1.75 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge40 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRF7831TRPBF
Product CategoryMOSFET
Unit Weight0.019048 oz
Factory Pack Quantity4000
SubcategoryMOSFETs
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation2.5 W
USHTS8541290095
DescriptionMOSFET MOSFT 30V 21A 3.6mOhm 40nC
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)