参数项参数值
参数项参数值
Forward Transconductance - Min0.06 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Id - Continuous Drain Current110 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time3.3 ns
Width1.3 mm
Rds On - Drain-Source Resistance7.7 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13.7 ns
Height1.1 mm
Length2.9 mm
MXHTS85412999
KRHTS8541219000
Mounting StyleSMD/SMT
Qg - Gate Charge2.1 nC
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ProductMOSFET Small Signal
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
RoHS Details
ImageInfineon Technologies BSS131H6327XT
Channel ModeEnhancement
SubcategoryMOSFETs
BrandInfineon Technologies
SeriesBSS131
Factory Pack Quantity3000
Unit Weight0.001199 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerInfineon
DescriptionMOSFET N-Ch 240V 100mA SOT-23-3
USHTS8541210095
Pd - Power Dissipation360 mW
Part # AliasesSP000702620 BSS131 H6327 BSS131H6327XTSA1
Vds - Drain-Source Breakdown Voltage240 V
Number of Channels1 Channel
Rise Time3.1 ns