参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current8.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance490 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time63 ns
MXHTS85412999
Width6.22 mm
Height2.3 mm
Length6.5 mm
KRHTS8541299000
Qg - Gate Charge10.5 nC
CNHTS8541290000
Package / CaseTO-252-3
Moisture SensitiveYes
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingReel
PackagingMouseReel
PackagingCut Tape
Fall Time23 ns
TARIC8541290000
RoHS Details
SeriesCoolMOS P7
ImageInfineon Technologies IPD70R600P7SAUMA1
BrandInfineon Technologies
Unit Weight0.011993 oz
Product TypeMOSFET
Factory Pack Quantity2500
ManufacturerInfineon
Product CategoryMOSFET
SubcategoryMOSFETs
Pd - Power Dissipation43.1 W
Part # AliasesIPD70R600P7S SP001491636
DescriptionMOSFET CONSUMER
USHTS8541290095
Vds - Drain-Source Breakdown Voltage700 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time5.5 ns
Moisture Sensitivity Level3 (168 Hours)