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IRFB4020PBF
厂牌：Infineon Technologies
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046107120
描述：MOSFET N-CH 200V 18A TO-220AB
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min24 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.8 ns
Rds On - Drain-Source Resistance100 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge18 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time6.3 ns
PackagingTube
ImageInfineon / IR IRFB4020PBF
TARIC8541290000
RoHS Details
Unit Weight0.211644 oz
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation100 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud
Vds - Drain-Source Breakdown Voltage200 V
USHTS8541290095
Number of Channels1 Channel
Rise Time12 ns
Moisture Sensitivity Level1 (Unlimited)