参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2.4 V
TechnologySi
Id - Continuous Drain Current21 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance4.6 mOhms
Transistor Type1 P-Channel
MXHTS85412999
Width5 mm
Height1 mm
Length6 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge110 nC
Moisture SensitiveYes
Package / CasePQFN-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRFH9310TRPBF
Unit Weight0.211644 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity4000
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation3.1 W
USHTS8541290095
DescriptionMOSFET 1 P-CH -30V HEXFET 7.7mOhms 11nC
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Moisture Sensitivity Level2 (1 Year)