参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current220 mA, 200 mA
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
CNHTS8541210000
Typical Turn-On Delay Time3.2 ns, 3.5 ns
MXHTS85412101
Rds On - Drain-Source Resistance2.3 Ohms, 5.1 Ohms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time21 ns, 18.8 ns
KRHTS8541219000
Minimum Operating Temperature- 55 C
JPHTS8541210101
Mounting StyleSMD/SMT
Package / CaseSOT-963-6
CAHTS8541210000
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Qg - Gate Charge380 pC, 350 pC
BrandDiodes Incorporated
TARIC8541210000
ManufacturerDiodes Incorporated
Factory Pack Quantity10000
ImageDiodes Incorporated DMC31D5UDJ-7
Product CategoryMOSFET
RoHS Details
SeriesDMC31
DescriptionMOSFET 30V N & P Enh FET Low RDSon 22.2pF
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541210095
Fall Time7.5 ns, 8.7 ns
Unit Weight9.523970 oz
Pd - Power Dissipation350 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time2.2 ns, 5.2 ns
Moisture Sensitivity Level1 (Unlimited)