参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current800 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current800 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage1 V
MXHTS85412101
DC Collector/Base Gain hfe Min30
CNHTS8541210000
Package / CaseTO-18-3
Mounting StyleThrough Hole
JPHTS8541210101
Maximum Operating Temperature+ 200 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
PackagingBulk
TARIC8541210000
BrandMicrochip / Microsemi
RoHS Details
ImageMicrochip / Microsemi 2N2222Ae3
Product CategoryBipolar Transistors - BJT
Unit Weight0.057438 oz
Factory Pack Quantity394
SubcategoryTransistors
ManufacturerMicrochip
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
USHTS8541210095
DescriptionBipolar Transistors - BJT BJTs
Moisture Sensitivity Level1 (Unlimited)