参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Typical Turn-On Delay Time49.4 ns
ManufacturerSTMicroelectronics
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance12.5 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time170 ns
Factory Pack Quantity2500
Package / CaseSOIC-8
BrandSTMicroelectronics
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
ImageSTMicroelectronics STS10P4LLF6
PackagingMouseReel
PackagingReel
PackagingCut Tape
SubcategoryMOSFETs
Qg - Gate Charge34 nC
Product CategoryMOSFET
DescriptionMOSFET LGS LV MOSFET
Product TypeMOSFET
MXHTS85412999
SeriesSTS10P4LLF6
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
Fall Time20 ns
CNHTS8541290000
Pd - Power Dissipation2.7 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time60.6 ns
Moisture Sensitivity Level1 (Unlimited)