DMG6601LVT-7

厂牌:DiodesZetex
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000046111111
描述:Trans MOSFET N/P-CH 30V 3.8A/2.5A Automotive 6-Pin TSOT-26 T/R
最新价格近期成交32单+
数量价格(含税)
3000¥1.6559
6000¥1.6057
12000¥1.5582
库存:18,000交期:2-3 Weeks起订:3000增量:3000
数量:
X
1.6559(单价)
合计:
¥4967.70
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage500 mV, 400 mV
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current3.8 A, 2.5 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
MXHTS85412101
Typical Turn-On Delay Time1.6 ns, 1.7 ns
KRHTS8541219000
CNHTS8541210000
Rds On - Drain-Source Resistance55 mOhms, 110 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time31.2 ns, 18.3 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseTSOT-26-6
Mounting StyleSMD/SMT
Qg - Gate Charge12.3 nC, 13.8 nC
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
RoHS Details
BrandDiodes Incorporated
Factory Pack Quantity3000
Product CategoryMOSFET
ImageDiodes Incorporated DMG6601LVT-7
TARIC8541210000
SeriesDMG6601
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET 30V Comp ENH Mode 25 to 30V MosFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time15.6 ns, 2.2 ns
Unit Weight0.000459 oz
USHTS8541210095
Pd - Power Dissipation1.3 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time7.4 ns, 4.6 ns
Moisture Sensitivity Level1 (Unlimited)