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RQ5C060BCTCL
厂牌：Rohm Semiconductor
包装：Tape & Reel (TR) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046111610
描述：MOS场效应管 RQ5C060BCTCL SOT-346T
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min9 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance16.1 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time105 ns
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge19.2 nC
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time72 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ5C060BCTCL
Unit Weight0.003224 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRQ5C060BC
USHTS8541290095
DescriptionMOSFET Pch -20V -6A Si MOSFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time38 ns
Moisture Sensitivity Level1 (Unlimited)