参数项参数值
参数项参数值
Forward Transconductance - Min12 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.8 V
TechnologySi
Id - Continuous Drain Current13 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance99 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time22 ns
Width3.3 mm
Height0.8 mm
Length3.3 mm
MXHTS85412999
Qg - Gate Charge22 nC
KRHTS8541299000
Package / CasePower-33-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time9.6 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
SeriesFDMC86259P
BrandON Semiconductor / Fairchild
Unit Weight0.005386 oz
RoHS Details
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDMC86259P
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage150 V
DescriptionMOSFET PT5 150/25V PchMOSFET
TradenamePowerTrench Power Clip
Number of Channels1 Channel
Rise Time3.3 ns