参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current21.1 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time15 ns
Width5 mm
Rds On - Drain-Source Resistance3.2 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time260 ns
Height1.1 mm
Length6 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge241 nC
Package / CasePower-56-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
ImageON Semiconductor / Fairchild FDMS6681Z
Channel ModeEnhancement
BrandON Semiconductor / Fairchild
Fall Time197 ns
Product TypeMOSFET
SeriesFDMS6681Z
ManufacturerON Semiconductor
USHTS8541290095
Unit Weight0.002402 oz
Factory Pack Quantity3000
Product CategoryMOSFET
Pd - Power Dissipation2.5 W
TradenamePowerTrench
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time38 ns
Moisture Sensitivity Level1 (Unlimited)