参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current45 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time34 ns
Width3.3 mm
Rds On - Drain-Source Resistance25 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Height0.8 mm
Length3.3 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge63 nC
Package / CasePower-56-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
SubcategoryMOSFETs
PackagingReel
ImageON Semiconductor / Fairchild FDMS86255
Channel ModeEnhancement
BrandON Semiconductor / Fairchild
Fall Time12 ns
Product TypeMOSFET
SeriesFDMS86255
ManufacturerON Semiconductor
USHTS8541290095
Unit Weight0.001993 oz
Factory Pack Quantity3000
Product CategoryMOSFET
DescriptionMOSFET FET 150V 12.4 MOHM PQFN56
Pd - Power Dissipation113 W
TradenamePowerTrench Power Clip
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time10 ns