参数项参数值
参数项参数值
ConfigurationDual
Forward Transconductance - Min37 S, 60 S
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Minimum Operating Temperature- 55 C
Transistor PolarityN-Channel
Id - Continuous Drain Current30 A, 40 A
KRHTS8541299000
JPHTS8541290100
Vgs - Gate-Source Voltage- 16 V, + 20 V
CAHTS8541290000
Typical Turn-On Delay Time13 ns, 22 ns
ImageVishay Semiconductors SIZ340DT-T1-GE3
Product CategoryMOSFET
Rds On - Drain-Source Resistance9.5 mOhms, 5.1 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time16 ns, 20 ns
Maximum Operating Temperature+ 150 C
Package / CasePowerPAIR-3x3-8
DescriptionMOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Mounting StyleSMD/SMT
TARIC8541290000
BrandVishay Semiconductors
Factory Pack Quantity3000
Qg - Gate Charge19 nC, 35 nC
MXHTS85412999
Product TypeMOSFET
ManufacturerVishay
RoHS Details
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time7 ns, 7 ns
Unit Weight0.005046 oz
CNHTS8541290000
Pd - Power Dissipation16.7 W, 31 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel