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FDMC8200
厂牌：安森美(onsemi)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046111784
描述：场效应管(MOSFET) FDMC8200 Power-33-8
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min29 S, 56 S
ConfigurationDual
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns, 13 ns
Width3 mm
Rds On - Drain-Source Resistance16 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time35 ns, 38 ns
Height0.8 mm
Length3 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge7.3 nC, 16 nC
Package / CasePower-33-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ProductMOSFET Small Signal
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Channel ModeEnhancement
BrandON Semiconductor / Fairchild
Fall Time1.3 ns, 6 ns
SeriesFDMC8200
Product TypeMOSFET
Factory Pack Quantity3000
ManufacturerON Semiconductor
Unit Weight0.006561 oz
USHTS8541290095
Product CategoryMOSFET
Pd - Power Dissipation1.9 W, 2.2 W
TradenamePowerTrench
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time3.1 ns, 4 ns
TypePower Trench MOSFET