参数项参数值
参数项参数值
Forward Transconductance - Min4.5 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3.7 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time4.8 ns
MXHTS85412999
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14.2 ns
Width2 mm
Height0.75 mm
Length2 mm
KRHTS8541299000
Qg - Gate Charge6.5 nC
Package / CaseWDFN-6
CNHTS8541290000
ProductMOSFET Small Signal
JPHTS8541290100
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Channel ModeEnhancement
Fall Time9.2 ns
TARIC8541290000
ImageON Semiconductor NTLJF4156NTAG
RoHS Details
Factory Pack Quantity3000
ManufacturerON Semiconductor
Unit Weight0.001017 oz
BrandON Semiconductor
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET NFET 2X2 30V 4A 70MOHM
SubcategoryMOSFETs
Pd - Power Dissipation1.5 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time9.2 ns
TypePower MOSFET and Schottky Diode
Moisture Sensitivity Level1 (Unlimited)