参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3.7 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time4.8 ns
Width2 mm
Rds On - Drain-Source Resistance70 mOhms
Height0.75 mm
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14.2 ns
MXHTS85412999
Length2 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge6.5 nC
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseWDFN-6
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor NTLJF4156NT1G
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Fall Time9.2 ns
SeriesNTLJF4156N
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
BrandON Semiconductor
Product TypeMOSFET
Unit Weight0.001017 oz
ManufacturerON Semiconductor
DescriptionMOSFET NFET 2X2 30V 4A 70MOHM
USHTS8541290095
Pd - Power Dissipation1.5 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time9.2 ns
Moisture Sensitivity Level1 (Unlimited)