参数项参数值
参数项参数值
DC Current Gain hFE Max470 at 2 mA, 5 V
Gain Bandwidth Product fT170 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85411001
Collector-Emitter Saturation Voltage50 mV
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
KRHTS8541219000
Package / CaseX2-DFN0806-3
CNHTS8541210000
JPHTS8541100901
Mounting StyleSMD/SMT
CAHTS8541100090
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated BC847BFA-7B
TARIC8541100000
RoHS Details
Factory Pack Quantity10000
SeriesBC847B
ManufacturerDiodes Incorporated
Unit Weight0.000028 oz
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 45V NPN SM Trans 435mW 100mA
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation435 mW
SubcategoryTransistors
USHTS8541100080
Moisture Sensitivity Level1 (Unlimited)