参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max- 25 V
Continuous Collector Current- 1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 0.28 V
MXHTS85412101
Width3.93 mm
DC Collector/Base Gain hfe Min85
Height4.7 mm
Length4.7 mm
KRHTS8541219000
CNHTS8541210000
Package / CaseTO-92-3 Kinked Lead
Mounting StyleThrough Hole
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingAmmo Pack
TARIC8541210000
RoHS Details
SeriesSS8550
ImageON Semiconductor / Fairchild SS8550CTA
BrandON Semiconductor / Fairchild
Unit Weight0.008466 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity2000
ManufacturerON Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation1 W
Part # AliasesSS8550CTA_NL
USHTS8541210095
Moisture Sensitivity LevelNot Applicable