参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max- 25 V
Continuous Collector Current- 1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 0.28 V
MXHTS85412999
Width3.93 mm
DC Collector/Base Gain hfe Min85
Height4.7 mm
Length4.7 mm
KRHTS8541299000
CNHTS8541210000
Package / CaseTO-92-3 Kinked Lead
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingAmmo Pack
TARIC8541290000
RoHS Details
SeriesSS8550
ImageON Semiconductor / Fairchild SS8550DTA
BrandON Semiconductor / Fairchild
Unit Weight0.008466 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity2000
ManufacturerON Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation1 W
USHTS8541290095
Moisture Sensitivity LevelNot Applicable