参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min50 S
KRHTS8541299000
JPHTS8541290100
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
CAHTS8541290000
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
ImageInfineon Technologies BSC028N06NS
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance2.8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Package / CasePG-TDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
ManufacturerInfineon
SeriesOptiMOS 5
MXHTS85412999
TARIC8541290000
RoHS Details
Qg - Gate Charge37 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time8 ns
Unit Weight0.003527 oz
CNHTS8541290000
Pd - Power Dissipation83 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time38 ns