参数项参数值
参数项参数值
Forward Transconductance - Min33 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current31 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance34 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Width6.22 mm
MXHTS85412999
Height2.3 mm
Length6.5 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge37 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 175 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time13 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRFR3410TRLPBF
Unit Weight0.019401 oz
Product CategoryMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation110 W
USHTS8541290095
DescriptionMOSFET MOSFT 100V 31A 39mOhm 37nC
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time27 ns