参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min50 S
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
ImageInfineon Technologies BSC031N06NS3 G
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time38 ns
Rds On - Drain-Source Resistance3.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time63 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Package / CaseTDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
ManufacturerInfineon
SeriesOptiMOS 3
RoHS Details
Qg - Gate Charge130 nC
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time16 ns
Unit Weight0.003527 oz
Part # AliasesBSC31N6NS3GXT SP000451482 BSC031N06NS3GATMA1
Pd - Power Dissipation2.5 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time161 ns