参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min100 mS
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current330 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541219000
Minimum Operating Temperature- 55 C
JPHTS8541210101
Typical Turn-On Delay Time25 ns
CAHTS8541210000
Rds On - Drain-Source Resistance2.25 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Package / CaseSOT-416-3
RoHS Details
ImageVishay Semiconductors SI1022R-T1-GE3
Factory Pack Quantity3000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
TARIC8541210000
ManufacturerVishay
BrandVishay Semiconductors
SubcategoryMOSFETs
Mounting StyleSMD/SMT
Product CategoryMOSFET
DescriptionMOSFET 60V Vds 20V Vgs SC75A
Qg - Gate Charge0.6 nC
MXHTS85412101
SeriesSI1
Product TypeMOSFET
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.001840 oz
CNHTS8541210000
Part # AliasesSI1022R-GE3
Pd - Power Dissipation250 mW
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)