BSS123_R1_00001

厂牌：Panjit International Inc.

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046131008

描述：MOSFET 100V N-Channel Enhancement Mode MOSFET-ESD Protected

商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current170 mA

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time3.4 ns

Rds On - Drain-Source Resistance10 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time8.2 ns

CNHTS8536300002

Qg - Gate Charge1.8 nC

Package / CaseSOT-23-3

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

Fall Time20 ns

TARIC8541290000

PackagingReel

PackagingMouseReel

PackagingCut Tape

BrandPanjit

RoHS Details

Product CategoryMOSFET

SeriesNFET-100TMN

Unit Weight0.000296 oz

SubcategoryMOSFETs

ManufacturerPanjit

Factory Pack Quantity3000

Product TypeMOSFET

Pd - Power Dissipation500 mW

USHTS8541210095

DescriptionMOSFET /A76/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-100TMN/NF100T-QI02/PJ///

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time19 ns

Moisture Sensitivity Level1 (Unlimited)