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商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT40 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current10 A
ConfigurationSingle
TechnologySi
Width4.83 mm
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Height15.75 mm
MXHTS85412999
Length10.53 mm
CNHTS8541290000
Collector-Emitter Saturation Voltage1 V
KRHTS8541299000
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleThrough Hole
Package / CaseTO-220-3
PackagingTube
Maximum Operating Temperature+ 150 C
BrandON Semiconductor
ManufacturerON Semiconductor
TARIC8541290000
RoHS Details
SubcategoryTransistors
ImageON Semiconductor D45H8G
Factory Pack Quantity50
SeriesD45H8
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 10A 60V 50W PNP
USHTS8541290075
Unit Weight0.211644 oz
Pd - Power Dissipation70 W
Moisture Sensitivity LevelNot Applicable