参数项参数值
参数项参数值
Gain Bandwidth Product fT40 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current4 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO7 V
MXHTS85412999
Length7.74 mm
Width2.66 mm
Height11.04 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min40
Minimum Operating Temperature- 65 C
JPHTS8541290100
Package / CaseTO-225-3
CAHTS8541290000
CNHTS8541290000
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Factory Pack Quantity500
PackagingBulk
ImageON Semiconductor MJE253G
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - BJT 4A 100V 15W PNP
SeriesMJE253
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.024692 oz
USHTS8541290095
Pd - Power Dissipation15 W
Moisture Sensitivity LevelNot Applicable