参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Width6.22 mm
Height2.3 mm
Rds On - Drain-Source Resistance4 mOhms
MXHTS85412999
Length6.5 mm
KRHTS8541299000
Qg - Gate Charge48 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageInfineon / IR IRLR6225TRPBF
Channel ModeEnhancement
SubcategoryMOSFETs
BrandInfineon / IR
Factory Pack Quantity2000
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 20V 100A 4.0mOhm 2.5V dr cpbl
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)