参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current14 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance160 mOhms
KRHTS8541299000
Qg - Gate Charge26 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
RoHS Details
ImageVishay Semiconductors IRF530STRLPBF
Channel ModeEnhancement
SeriesIRF
SubcategoryMOSFETs
BrandVishay Semiconductors
Factory Pack Quantity800
Unit Weight0.068654 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET N-Chan 100V 14 Amp
ManufacturerVishay
USHTS8541290095
Pd - Power Dissipation88 W
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)