参数项参数值
参数项参数值
Forward Transconductance - Min190 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time26 ns
Rds On - Drain-Source Resistance1.4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time31 ns
Width5 mm
Height0.83 mm
Length6 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge120 nC
Package / CasePQFN-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time13 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageInfineon / IR IRFH5300TRPBF
RoHS Details
Unit Weight0.008122 oz
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation3.6 W
BrandInfineon / IR
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET 30V SINGLE N-CH 1.4mOhms 50nC
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Rise Time30 ns
Moisture Sensitivity Level1 (Unlimited)