参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max65 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min110
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000282 oz
Pd - Power Dissipation225 mW
BrandON Semiconductor
ImageON Semiconductor SBC846ALT1G
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT SS GP XSTR NPN 65V
Moisture Sensitivity Level1 (Unlimited)