参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2.2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width3.9 mm
Rds On - Drain-Source Resistance240 mOhms
Transistor Type1 P-Channel
Height1.75 mm
Qg - Gate Charge33 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandInfineon / IR
ManufacturerInfineon
Factory Pack Quantity4000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET MOSFT PCh -150V -2.2A 240mOhm 33nC
ImageInfineon / IR IRF6216TRPBF
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.019048 oz
Pd - Power Dissipation2.5 W
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)