参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current290 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance2 MOhms
Transistor Type1 N-Channel
Width5.31 mm
Height20.7 mm
Length15.87 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge360 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
PackagingTube
TARIC8541290000
ImageInfineon Technologies IRFP4468PBF
RoHS Details
Unit Weight1.340411 oz
Factory Pack Quantity400
Product TypeMOSFET
Pd - Power Dissipation520 W
BrandInfineon Technologies
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET MOSFT 100V 290A 2.6mOhm 360nC Qg
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)