参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.1 V
TechnologySi
Id - Continuous Drain Current310 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time3 ns
Rds On - Drain-Source Resistance1.6 Ohms
Transistor Type1 N-Channel Trench MOSFET
Typical Turn-Off Delay Time10 ns
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412999
KRHTS8541219000
Qg - Gate Charge0.6 nC
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
Channel ModeEnhancement
CNHTS8541210000
Fall Time5 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageNexperia 2N7002PW,115
RoHS Details
Unit Weight0.000176 oz
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation310 mW
BrandNexperia
Part # Aliases934064137115
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET
ManufacturerNexperia
Vds - Drain-Source Breakdown Voltage60 V
USHTS8541210075
Number of Channels1 Channel
Rise Time4 ns
Moisture Sensitivity Level1 (Unlimited)