参数项参数值
参数项参数值
tariffCode85412100
Power Dissipation P Channel-
rohsCompliantNO
Transistor PolarityN Channel
Power Dissipation N Channel200mW
hazardousfalse
rohsPhthalatesCompliantNO
Rds(on) Test Voltage10V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
usEccnEAR99
Drain Source On State Resistance P Channel-
Automotive Qualification Standard-
Drain Source Voltage Vds60V
MSLMSL 1 - Unlimited
Drain Source On State Resistance N Channel13.5ohm
Product RangeMulticomp Pro MOSFET, N Channel
euEccnNLR
Channel TypeN Channel
Qualification-
On Resistance Rds(on)4.4ohm
Power Dissipation Pd200mW
productTraceabilityNo
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel115mA
Continuous Drain Current Id115mA
Continuous Drain Current Id P Channel-
Operating Temperature Max150°C
Transistor MountingSurface Mount
Drain Source Voltage Vds N Channel60V
SVHCNo SVHC (17-Jan-2023)