参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min5 s
Vgs th - Gate-Source Threshold Voltage1.6 V
TechnologySi
Minimum Operating Temperature- 55 C
Transistor PolarityN-Channel
Id - Continuous Drain Current2.3 A
KRHTS8541299000
JPHTS8541290100
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
CAHTS8541290000
Length2.9 mm
Height1.1 mm
Typical Turn-On Delay Time4.4 ns
ImageInfineon Technologies BSS306NH6327XTSA1
Product CategoryMOSFET
Rds On - Drain-Source Resistance57 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time8.3 ns
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
DescriptionMOSFET N-Ch 30V 2.3A SOT-23-3
PackagingReel
PackagingMouseReel
PackagingCut Tape
Width1.3 mm
Mounting StyleSMD/SMT
TARIC8541290000
BrandInfineon Technologies
Factory Pack Quantity3000
Qg - Gate Charge1.5 nC
MXHTS85412999
Product TypeMOSFET
SeriesBSS306
ManufacturerInfineon
RoHS Details
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time1.4 ns
Unit Weight0.000282 oz
CNHTS8541290000
Part # AliasesBSS306N H6327 SP000928940
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time2.3 ns
Moisture Sensitivity Level1 (Unlimited)