参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 1 V
TechnologySi
Id - Continuous Drain Current- 15 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Rds On - Drain-Source Resistance8.2 mOhms
Transistor Type1 P-Channel
Width3.9 mm
Height1.75 mm
KRHTS8541299000
Qg - Gate Charge87 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRF7425TRPBF
TARIC8541290000
RoHS Details
Unit Weight0.019048 oz
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation2.5 W
BrandInfineon / IR
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET MOSFT PCh -20V -15A 8.2mOhm 87nC
Vds - Drain-Source Breakdown Voltage- 20 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)