参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 4 V
TechnologySi
Id - Continuous Drain Current6.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width6.22 mm
Rds On - Drain-Source Resistance480 mOhms
Transistor Type1 P-Channel
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge18 nC
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageInfineon / IR IRFR9120NTRLPBF
Channel ModeEnhancement
SubcategoryMOSFETs
BrandInfineon / IR
Factory Pack Quantity3000
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerInfineon
USHTS8541290095
DescriptionMOSFET MOSFT PCh -6.5A 480mOhm 18nC
Pd - Power Dissipation39 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)