参数项参数值
参数项参数值
DC Current Gain hFE Max80
Gain Bandwidth Product fT4 MHz
Collector- Base Voltage VCBO400 V
Maximum DC Collector Current16 A
Collector- Emitter Voltage VCEO Max250 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.4 V
Width4.8 mm
Length15.6 mm
Height18.7 mm
DC Collector/Base Gain hfe Min20
MXHTS85412999
KRHTS8541299000
Package / CaseTO-3P-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingTube
BrandON Semiconductor
CNHTS8541210000
ManufacturerON Semiconductor
Factory Pack Quantity30
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SeriesNJW21194
TARIC8541290000
RoHS Details
ImageON Semiconductor NJW21193G
DescriptionBipolar Transistors - BJT 200W PNP
SubcategoryTransistors
Unit Weight0.238311 oz
USHTS8541290095
Moisture Sensitivity LevelNot Applicable